050-7611 rev a 3-2005 APT200GN60JDQ4 typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 4 m a) gate threshold voltage (v ce = v ge , i c = 3.2ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 200a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 200a, t j = 125c) collector-emitter on voltage (v ge = 15v, i c = 100a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 100a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) intergrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r gint unit volts ma na ? symbol v c es v ge i c1 i c2 i cm ssoa p d t j ,t stg APT200GN60JDQ4 600 20 250 110 600 600a @600v 568 -55 to 150 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range APT200GN60JDQ4 600v apt w ebsite - http://www .a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. utilizing the latest field stop and trench gate technologies, these igbts have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy paralleling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coef?cient. a built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. low gate charge simpli?es gate drive design and minimizes losses. ? 600v npt field stop ? trench gate: low v ce(on) ? easy paralleling ? 10s short circuit capability ? intergrated gate resistor: low emi, high reliability applications : welding, inductive heating, solar inverters, motor drives, ups, pass transistor s o t -2 2 7 g e e c is oto p ? "ul recognized" min typ max 600 5 5.8 6.5 1. 05 1.45 1.85 1.65 1.15 1.19 4 tbd 600 2 c e g
050-7611 rev a 3-2005 APT200GN60JDQ4 thermal and mechanical characteristics unit c/w volts oz gm ib?in n?m min typ max .22 .33 2 500 1.03 29.2 10 1.1 characteristic junction to case (igbt) junction to case (diode) rms voltage ( 50-60hz sinusoidal wavefom from terminals to mounting base for 1 min.) package weight maximum terminal & mounting torque symbol r jc r jc v isolation w t torque dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa scsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 100a t j = 150c, r g = 5 ? 7 , v ge = 15v, l = 100h,v ce = 600v v cc = 480v, v ge = 15v, t j = 125c, r g = 5 ? 7 i nductive switching (25c) v cc = 400v v ge = 15v i c = 100a r g = 5 ? 7 t j = +25c inductive switching (125c) v cc =400v v ge = 15v i c = 100a r g = 5 ? 7 t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area short circuit safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 14100 4610 4000 8.2 1180 85 660 600 10 55 20 1050 50 tbd 1720 2810 55 20 1150 60 tbd 1955 2865 unit pf v nc a s ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leackage. 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive tun-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24) 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22) 6 e off is the clamped induvtive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23) 7 r g is external gate resistance, not including r gint nor gate driver impedance. (mic4452) apt reserves the right to change, without notice, the speci?cations and information contained herein .
050-7611 rev a 3-2005 APT200GN60JDQ4 typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) v ce = 480v v ce = 300v v ce = 120v i c = 100a t j = 25c 250s pulse test<0.5 % duty cycle 450 400 350 300 250 200 150 100 50 0 400 350 300 250 200 150 100 50 0 2.5 2.0 1.5 1.0 0.5 0 1.10 1.05 1.00 0.95 0.90 0 5 10 15 20 25 30 0 5 10 15 20 25 30 0 2 4 6 8 10 12 0 200 400 600 800 1000 1200 1400 6 8 10 12 14 16 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 450 400 350 300 250 200 150 100 50 0 16 14 12 10 8 6 4 2 0 2.0 1.5 1.0 0.5 0 300 250 200 150 100 50 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 15 & 10v 7v 6v 5.5v 5v t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 200a i c = 100a i c = 50a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 200a i c = 100a i c = 50a 6.5v 7.5v 15 & 10v 7v 6v 5.5v 5v 6.5v 7.5v limited by package
050-7611 rev a 3-2005 APT200GN60JDQ4 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 5 ? l = 100 h v ce = 400v v ge = +15v r g = 5 ? r g = 5 ? , l = 100 h, v ce = 400v v ce = 400v t j = 25c , t j =125c r g = 5 ? l = 100 h 1200 1000 800 600 400 200 0 100 80 60 40 20 0 12000 10000 8000 6000 4000 2000 0 7000 6000 5000 4000 3000 2000 1000 0 v ge = 15v t j = 125c , v ge = 15v t j = 25 or 125c ,v ge = 15v t j = 25c , v ge = 15v t j = 125c ,v ge = 15v t j = 25c ,v ge = 15v v ce = 400v v ge = +15v r g = 5 ? t j = 125c , v ge = 15v t j = 25c , v ge = 15v v ce = 400v v ge = +15v r g = 5 ? r g = 5 ? , l = 100 h, v ce = 400v switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature 70 60 50 40 30 20 10 0 60 50 40 30 20 10 0 12000 10000 8000 6000 4000 2000 0 60000 50000 40000 30000 20000 10000 0 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 5 25 45 65 85 105 125 145 165 0 10 20 30 40 50 0 25 50 75 100 125 e on2 , 150a e off , 150a e on2 , 100a e off , 100a e on2 , 50a e off , 50a v ce = 400v v ge = +15v t j = 125 c e on2, 150a e off, 150a e off, 100a e on2, 100a e on2, 50a e off, 50a
050-7611 rev a 3-2005 APT200GN60JDQ4 typical performance curves 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 20,000 10,000 5000 1000 500 100 700 600 500 400 300 200 100 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance v s collecto r-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 25 50 75 100 125 150 175 200 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 5 ? 50 10 1 0.5 0.1 0.05 f max = min (f ma x , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e of f f max2 = p diss = t j - t c r jc c 0es c res c ies peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.053 6 0.169 0.00826f 0.353 f powe r (watts ) rc mode l junctio n temp. ( c) case temperature. ( c)
050-7611 rev a 3-2005 APT200GN60JDQ4 figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% apt100dq60 *driver same type as d.u.t. i c v clam p 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circui t i c a d.u.t. v ce figure 21, inductive switching test circui t v cc
050-7611 rev a 3-2005 APT200GN60JDQ4 typical performance curves characteristic / test conditions maximum average forward current (t c = 108c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 100a forward voltage i f = 200a i f = 100a, t j = 125c static electrical characteristics unit amps unit volts min typ max 1.6 2.2 2.05 1.28 APT200GN60JDQ4 100 156 1000 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci?ed. ultrafast soft recovery anti-parallel diode min typ max - 34 - 160 - 290 - 5 - - 220 - 1530 - 13 - - 100 - 2890 - 44 unit ns nc amp s ns nc amp s ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q r r i r rm t rr q r r i rrm t rr q r r i r rm test conditions i f = 100a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 100a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 100a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 figure 25b, transient thermal impedance model peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.0673 c/ w 0.188 c/ w 0.0743 c/ w 0.0182 j/ c 0.361 j/ c 5.17 j/ c powe r (watts ) junctio n temp ( c) rc mode l case temperatur e ( c)
050-7611 rev a 3-2005 APT200GN60JDQ4 t j =125 c v r =400v 50a 100a 200a duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 180 160 140 120 100 80 60 40 20 0 q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) 0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = -55 c t j = 25 c t j = 125 c t j = 175 c t j =125 c v r =400v 100a 50a 200a 300 250 200 150 100 50 0 4000 3500 3000 2500 2000 1500 1000 500 0 t j =125 c v r =400v 200a 100a 50a 300 250 200 150 100 50 0 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) q rr t rr q rr i rrm 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1400 1200 1000 800 600 400 200 0 t rr v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery current vs. current rate of change t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage
050-7611 rev a 3-2005 APT200GN60JDQ4 typical performance curves 4 3 1 2 5 5 zer o 1 2 3 4 di f /d t - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current . t rr - reverse r ecovery time, measured from zero crossing wher e diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero . figure 33. diode test circui t figure 34, diode reverse recovery waveform and definitions 0.25 i rr m pearson 2878 current transformer di f /d t adjus t 30 h d.u.t. +18v 0v v r t rr / q rr waveform sot-227 (isotop ? ) package outlin e 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches ) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * emitter/anode collector/cathode gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * emitter/anode emitter/anode terminals ar e shorted internally. current handling capability is equal for either emitter/anode terminal . apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. isotop ? is a registered trademark of sgs thomson.
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